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Advanced Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ52N30P IXTT52N30P
VDSS ID25
RDS(on)
= 300 V = 52 A = 66 m
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
Maximum Ratings 300 300 20 30 52 150 52 30 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C
TO-3P (IXTQ)
G
C
E
(TAB)
TO-268 (IXTT)
G
S D = Drain TAB = Drain
D (TAB)
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300
1.13/10 Nm/lb.in. 5.5 5.0 g g
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 100 25 250 57 66 V V nA A A m
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS99115A(10/04)
IXTQ 52N30P IXTT 52N30P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 20 30 3490 VGS = 0 V, VDS = 25 V, f = 1 MHz 550 130 24 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 22 60 20 110 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 53 0.31 (TO-3P) 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W TO-3P (IXTQ) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD Trr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 52 150 1.5 250 3.0 A A V ns C TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A -di/dt = 100 A/s VR = 100V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 52N30P IXTT 52N30P
Fig. 1. Output Characteristics @ 25 Deg. C
55 50 45 40 7V VGS = 10V 8V 150 VGS = 10V 9V 125
Fig. 2. Extended Output Characteristics @ 25 deg. C
I D - Amperes
30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5V 6V
I D - Amperes
35
100
8V
75
7V
50 6V
25
0
5V 0 5 10
V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C
55 50 45 40 VGS = 10V 8V 7V 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 1 2 3 4 5 6 7 8 9 10
V D S - Volts
15
20
25
Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature
VGS = 10V
35 30 25 20 15 10 5 0 5V 6V
R D S (on) - Normalized
I D - Amperes
I D = 52A I D = 26A
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID
VGS = 10V
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
55 50 45
3.8 3.4
R D S (on) - Normalized
3
40
I D - Amperes
TJ = 25C 100 125 150
2.6 2.2 1.8 1.4 1 0.6 0 25 50 75 TJ = 125C
35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
(c) 2004 IXYS All rights reserved
TC - Degrees Centigrade
IXTQ 52N30P IXTT 52N30P
Fig. 7. Input Adm ittance
100 90 80 70 50 TJ = -40C 25C 125C 60
Fig. 8. Transconductance
I D - Amperes
60 50 40 30 20 10 0 4 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125C 25C -40C
g f s - Siemens
40
30
20
10
0 0 10 20 30 40 50 60 70 80 90 100
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
150 10 9 125 8 7 VDS = 150V I D = 26A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
100
VG S - Volts
TJ = 125C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4
6 5 4 3 2 1
75
50
25
0
0 0 20 40 60 80 100 120
V S D - Volts Fig. 11. Capacitance
10000 f = 1MHz C iss R DS(on) Limit 1000
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
TC = 25C
Capacitance - pF
I D - Amperes
100 1ms 10ms 10 DC
25s
1000 C oss
C rss 100 0 5 10 15 1
V D S - Volts
20
25
30
35
40
10
100
1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 52N30P IXTT 52N30P
Fig. 13. Maximum Transient Therm al Resistance
1.00
R (th) J C - (C/W)
0.10
0.01 1 10 100 1000
Pulse Width - milliseconds
(c) 2004 IXYS All rights reserved

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